退火温度对低温生长Mg_xZn_(1-x)O薄膜光学性质的影响  

Effect of annealing on optical properties of Mg_xZn_(1-x)O thin films deposited at low temperature

作　　者：张锡健[1] 马洪磊[1] 王卿璞[1] 马瑾[1] 宗福建[1] 肖洪地[1] 计峰[1] 

机构地区：[1]山东大学物理与微电子学院,济南250100

出　　处：《物理学报》2006年第1期437-440,共4页Acta Physica Sinica

基　　金：教育部博士点基金(批准号:20020422056)资助的课题~~

摘　　要：用射频磁控溅射法在80℃衬底温度下制备出MgxZn1-xO(x=0·16)薄膜,用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对MgxZn1-xO薄膜结构和光学性质的影响.测量结果显示,MgxZn1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大,(002)XRD峰半高宽(FWHM)减小.结果证明,用射频磁控溅射法通过适当控制退火温度可得到高质量MgxZn1-xO薄膜.MgxZn1-xO films（ x = 0.16） have been prepared at 80℃ by radio frequency magnetron sputtering. The effect of the annealing temperature on the structure and optical properties of the films are studied using XRD, photoluminescence and the transmittance spectra. The results indicate that the thin films have bexagonal wurtzite single phase structure and a prefered orientation with the c axis perpendicular to the substrate. With increasing annealing temperature the intensities of the XRD （002） peaks increase, the grain size and intensity of the UV photoluminescence peaks also increase, while the FWHM of （002） peaks decreases, which demonstrates that high quality MgxZn1-xO films deposited by RF magnetron sputtering can be obtained by properly controlling the annealing temperature.

关 键 词：MgxZn1-xO薄膜 射频磁控溅射 退火 

分 类 号：O484.41[理学—固体物理]