基于交叉结构的分子电子器件及其逻辑电路的研究进展  

Molecular electronic devices and Logic circuits based on crossbar structures

作　　者：涂德钰[1] 王丛舜[1] 刘明[1] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029

出　　处：《物理》2006年第1期63-68,共6页Physics

基　　金：国家高技术研究发展计划(批准号:2004AA302G13);国家自然科学基金(批准号:90401002;60236010)资助项目

摘　　要：随着大规模集成电路的特征尺寸进入到纳米级,传统的硅基集成电路技术面临挑战,新材料及新结构的研究成为热点,纳电子学分支之一的分子电子器件正在蓬勃发展.场效应晶体管(FET)和交叉结构是目前主要的分子电子器件的结构,而交叉结构有利于集成受到广泛关注.文章概述了基于交叉结构的分子纳米器件工作原理、工艺流程,并着重介绍了逻辑功能的实现方法及其研究进展.最后,总结了交叉结构的前景及所面临的困难.As very large integrated circuits reach a critical dimension of a few tens of nanometers, conventional silicon based technology is facing a big challenge, tNew materials and architectures are becoming a hot topic, and much effort is being put into developing molecular electronic devices as a part of nanoelectronics. The current primary architectures of molecular electronic devices are field effect transistors and crossbar switches, and crossbar structures are attracting world - wide attention due to theireasy integration. The principles and processing of molecular electronic devices based on crossbar architecture are; the implementation of logic circuits based on crossbars, and recent progress in this area are described. The prospects and problems of crossbar circuits are also summarized.

关 键 词：交叉结构 纳米压印 逻辑电路 分子电子学 

分 类 号：TN403[电子电信—微电子学与固体电子学]