重掺砷硅单晶中痕量硼二次离子质谱定量分析的异常现象  

Abnormal Phenomena of Trace Boron in Heavily As Doped Silicon Crystal Using Second Ion Mass Spectrometry Analysis

作　　者：方培源[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《质谱学报》2006年第1期26-29,共4页Journal of Chinese Mass Spectrometry Society

摘　　要：在用二次离子质谱(SIMS)进行重掺砷硅单晶中痕量硼的定量分析时,有时会出现硅片表面局部区域硼浓度非常高,接近1016atom/cm3的现象。但是只要把分析区域横向移动几百微米的距离,硼浓度就降到正常范围<1×1014atom/cm3。按重掺砷硅单晶制备工艺过程,硼在硅单晶中的分布应该是非常均匀的,而且存在这种硼浓度分布的异常硅单晶加工生产的n/n+外延片并没有出现质量问题。这说明硼浓度分布异常的情况也许是一个假像。本文将探索这一异常情况与硅中所存在的氧的相互关系。In the quantities analysis of trace impurity boron in heavily As doped silicon crystal using second ion mass spectrometry （SIMS）, it is occasionally observed that the boron concentration level in some local regions at the surface is tremendous higher （ as high as 10^16 atom/cm^3） than the normal level. If the analysis region is shifted few hundred microns, however, the boron concentration level reduces to normal level （〈1×10^14 atom/cm^3） at once. Based on heavily As doped silicon crystal manufacturing process, boron distribution in the silicon crystal should be uniform. Furthermore, n/n^＋ epitaxy silicon wafers manufactured by such kind of silicon crystal exhibits good quality with the specifications. It was estimated that the abnormal distribution phenomena of boron concentration in the heavily As doped silicon during the SIMS analysis should be induced possibly by the oxygen existing in the silicon crystal.

关 键 词：痕量硼 重掺砷单晶硅 SIMS定量分析 硅中氧 

分 类 号：O657.63[理学—分析化学] O613.81[理学—化学]