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作 者:高志强[1] 杨传仁[1] 陈宏伟[1] 符春林[1] 廖家轩[1] 赵莉[1]
机构地区:[1]电子科技大学微电子与固体电子学院,四川成都610054
出 处:《压电与声光》2006年第1期67-68,71,共3页Piezoelectrics & Acoustooptics
基 金:重大基金资助项目(Z01)
摘 要:利用射频磁控溅射在硅和石英基片上制备了Ba0.6Sr0.4TiO3(BST)薄膜。并用气氛炉和快速晶化炉对其进行退火,比较了退火前后的XRD谱和光致发光光谱,结果表明,退火后,氧缺位减少,发光光谱在紫外区的峰位发生红移,在可见光区的峰位却发生蓝移,荧光峰半高宽变窄。同时,透射光谱表明,薄膜的禁带宽度变窄。Ba0. 6 Sr0.4 TiO3 (BST) films have been deposited on silicon or quartz substrate using RF magnetron sputtering, and treated by furnace annealing and rapid thermal annealing. XRD and luminescences spectra show that after the films were annealed, the Oxygen vacancy reduced, the spectra in ultraviolet region showed red-shift and those in visible region showed blue-shift, and full width at half-maximum(FWHM) of the fluorescence peak became narrow. Meanwhile, the transmission spectra exhibited that the band-gap of the films became narrow.
分 类 号:TN384[电子电信—物理电子学]
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