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作 者:王根水[1] 赵强[1] 孟祥建[1] 石富文[1] 孙璟兰[1] 褚君浩[1]
机构地区:[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083
出 处:《压电与声光》2006年第1期72-75,共4页Piezoelectrics & Acoustooptics
基 金:国家自然科学基金项目资助(60076029);中国科学院红外物理国家重点实验室开放课题基金资助项目(200304)
摘 要:采用化学溶液法在Si基衬底上制备了PbZr0.4Ti0.6O3/LaNiO3异质结构。X-射线衍射测量结果表明,制备的PbZr0.4Ti0.6O3/LaNiO3异质结构中PbZr0.4Ti0.6O3薄膜呈高度(100)择优取向;原子力显微镜测量表明制备的PbZr0.4Ti0.6O3薄膜的表面平整、均匀、结构致密;RT-66A测量表明,400 kV/cm的外加电场下,LaNiO3/PbZr0.4Ti0.6O3/LaNiO3结构具有优良的铁电性,剩余极化强度为14.6μC/cm2,矫顽电场为41 kV/cm。翻转1×108次极化下降小于10%,显示了很好的疲劳特性。并进一步研究了Pb含量对PbZr0.4Ti0.6O3薄膜的微结构和极化特性的影响。PbZr0.4Ti0.6O3/LaNiO3 heterostructures have been grown on Si-based substrates by chemical solution routes. The microstructure and morphology of the prepared PbZr0.4 Ti0.6 03 and LaNiO3 thin films were investigated via X-ray diffractometry and atomic force microscopy techniques. PbZr0.4Ti0.6O3and LaNiO3 show highly (100) orientation. The PbZr0.4Ti0.6O3 thin films show smooth surface morphology, denser structure. At an applied electric field of 400 kV/cm, The remnant polarization (Pr) and coercive field (Eo) of the PbZr0.4Ti0.6O3 thin films were obtained from the P-V loop measurements about 14.6 μC/cm^2 and 41kV/cm, respectively. LaNiO3/PbZr0.4Ti0.6O3/ LaNiO3 show little polarization degradation after 108 fatigue cycles. The effect of Pb content in precursor solution on microstructure and polarization properties of LaNiO3 / PbZr0.4Ti0.6O3 / LaNiO3 were investigated.
关 键 词:LaNiO3薄膜 PbZr0.4Ti0.6O3铁电薄膜 异质结构 疲劳特性
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