循环间歇溅射工艺对PLT薄膜性能的影响  

Effect of Circular Intermittent Deposition on the Morphologies,Microstructures and Properties of PLT Thin Films

作　　者：孙明霞[1] 钟朝位[1] 张树人[1] 张万里[1] 陈祝[1] 郑泽渔[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《压电与声光》2006年第1期82-84,共3页Piezoelectrics & Acoustooptics

摘　　要：采用射频磁控溅射技术利用循环间歇溅射工艺,在Pt/Ti/SiO2/Si基片上制备出了镧钛酸铅(PLT)薄膜。通过原子力显微镜、X-射线衍射仪分析了循环间歇溅射工艺对薄膜形貌、结构和铁电性能的影响。实验结果表明,相比于连续溅射工艺,循环间歇溅射工艺的基片温度较低,且制得的PLT薄膜晶粒细小、均匀,结构致密。薄膜具有纯钙钛矿型结构,循环次数从1次增加到3次,其(100)和(200)峰衍射强度逐渐增强,结晶性提高,铁电性能逐渐增强,其饱和极化强度由28μC/cm2增大到53μC/cm2,剩余极化强度由5μC/cm2增大到12μC/cm2。循环4次溅射后,薄膜的结晶性和铁电性开始下降。Pb0.88 La0.12 TiO3 thin films are fabricated by rf magnetron sputtering on SiO2/Si substrate. In this method, circle intermittent deposition is realized by periodical repetition of ＂deposition-nondeposition-annealing＂. With the aid of atom force microscopy （AFM） and X-ray diffraction （XRD）, the surface morphologies and crystallization of the films have been investigated. Compared with the films sputtered by continuous deposition, the surface of the films sputtered by circle intermittent deposition is more smooth and homogeneous. This kind of deposition also decreases the substrate temperature. It is shown that the films have good crystallization and a single perovskite phase. With the increasing of circle times from 1 to 3, the intensity of （100） and （200） orientation becomes stronger, the remnant polarization improved from 5μC/cm^2 to 12 μC/cm^2 and the maximum polarization increased from 28 μC/cm^2 to 53μC/cm^2. The crystallization and ferroelectrical properties of PLT films decreased after being deposited by 4 circle times.

关 键 词：射频磁控溅射 循环间歇溅射 镧钛酸铅薄膜 铁电性能 

分 类 号：TM223[一般工业技术—材料科学与工程]