Transport and electroluminescence mechanism in Au/(Si/SiO_2)/P-Si film  

作　　者：ZHANG Kai-biao MA Shu-yi MA Zi-jun CHEN Hai-xia 

机构地区：[1]College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China

出　　处：《Optoelectronics Letters》2006年第1期48-50,共3页光电子快报（英文版）

摘　　要：The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.

关 键 词：光致发电 硅薄膜 Au/(Si/SiO2 )/p-Si 磁电管 电子散射 

分 类 号：O484[理学—固体物理]