纳米MoS_2的制备及其与聚吡咯物复合膜光学性能的研究  

Study on the Preparation of Nanosize MoS_2 and Photo Characteristics of MoS_2-polyconductor Film

作　　者：何晓云[1] 钟淮真[1] 李国强[1] 陈力勤[1] 陈震[1] 

机构地区：[1]福建师范大学化学与材料学院,福建福州350007

出　　处：《化学世界》2006年第2期69-70,77,共3页Chemical World

基　　金：福建省科技厅重点项目(02H034);福建省教育厅项目(JA02192;JA02189;JB02177)

摘　　要：以有机热溶剂法制备MoS2,并以XRD对其结构进行表征.TEM形貌观察表明晶粒具有纳米尺寸。以电化方法在ITO导电玻璃基体上制备聚合物聚吡咯薄膜。在导电聚合物膜上涂布纳米MoS2晶体,荧光分析发现其荧光光谱相对于聚合物膜有一定程度的红移。Z-Scan测试其折射率的结果表明其具有非线性光学特性。Nanosize MoS2 semiconductor particles were synthesized by using the solvothermal technique. The structure was characterized by means of XRD, TEM techniques. PPY films were prepared by electro-chemical method onto the indium-tin oxide glass （ITO）. The nanoparticles were doped on the polyconductor film by the dipping process, and the nanoparticle-polyconductor composite films were acquired. The optical properties of the films were studied by PL method. The red shift in the fluorescence spectra for the nanocrystal-polyconductor composite films was observed. The refractive index of the films was obtained by Z-Scan, and the result indicated the films possessed nonlinear photo characteristics.

关 键 词：聚吡咯 复合膜 纳米 半导体 

分 类 号：O614.24[理学—无机化学]