大规模集成电路浮栅ROM器件总剂量辐射效应  

Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices

作　　者：何宝平[1,2] 周荷琴[1] 郭红霞[3] 周辉[3] 罗尹虹[3] 姚志斌[3] 张凤祁[3] 

机构地区：[1]中国科学技术大学 [2]西北核技术研究所,西安710024 [3]西北核技术研究所

出　　处：《Journal of Semiconductors》2006年第1期121-125,共5页半导体学报（英文版）

摘　　要：提出了一种大规模集成电路总剂量效应测试方法在监测器件和电路功能参数的同时,监测器件功耗电流的变化情况,分析数据错误和器件功耗电流与辐射总剂量的关系.根据该方法利用60Coγ射线进行了浮栅ROM集成电路(AT29C256)总剂量辐照实验,研究了功耗电流和出错数量在不同γ射线剂量率辐照下的总剂量效应,以及参数失效与功能失效时间随辐射剂量率的变化关系,并利用外推实验技术预估了电路在空间低剂量率环境下的失效时间.A method for testing total dose effects is presented for VLSI. The consumption current of the device is measured. Meanwhile, the function parameters of the device and circuit are also measured. The relations between data errors, consumption current and total radiation dose are analyzed. Ionizing radiation experiments are performed on floating gate ROM devices by using ^60Co γ-rays as prescribed by this test method. The experimental aim is to examine the radiation response at various dose rates. The parameters and function failure of the devices as function of dose rate are studied. By extrapolation, we predict the failure time of a floating gate ROM device in a space radiation environment.

关 键 词：大规模集成电路 总剂量效应 低剂量率 失效时间 

分 类 号：TN47[电子电信—微电子学与固体电子学]