ICP刻蚀对InAsP/InP应变多量子阱的损伤  

Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

作　　者：曹萌[1,2] 吴惠桢[1] 劳燕锋[1] 黄占超[1] 刘成[1] 张军[3] 江山[3] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室 [2]中国科学院研究生院,北京100039 [3]武汉邮电科学研究院

出　　处：《Journal of Semiconductors》2006年第1期178-182,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2003CB314903)~~

摘　　要：为了研究ICP刻蚀对InAsP/InP应变多量子阱的损伤情况,用气态源分子束外延技术生长了经特殊设计的InAsP/InP应变多量子阱结构.采用感应耦合等离子体对其进行刻蚀.通过测量刻蚀前、后量子阱结构的光致发光谱,确定了刻蚀75nm后样品损伤深度约为40nm,应用Rahman模型计算得到的理论损伤深度为43.5nm,两者符合得比较好.通过分析损伤产生的机理,认为产生损伤的主要原因是离子隧穿.To investigate the ICP etching damage to InAsP/InP strained multiple quantum wells,specially designed InAsP/InP strained multiple quantum wells （SMQWs） are grown using gas source molecular beam epitaxy and etched by an inductively coupled plasma.The depth of damage in the SMQW structure is about 40nm after etching for 75nm. This is determined by measuring the photo-luminescence spectra of the sample before and after etching. This result is in good agreement with the theoretical damage depth of 43.5nm by M. Rahman＇ s model. It is found that the defects are mainly caused by ion channeling.

关 键 词：干法刻蚀 应变量子阱 光致发光谱 损伤 

分 类 号：TN304[电子电信—物理电子学]