少突胶质细胞电离辐射损伤机制的研究进展  

PROGRESS IN STUDY ON MECHANISMS OF IONIZING RADIATION-INDUCED OLIGODENDROCYTE INJURY

作　　者：陈应柱[1] 田野[1] 包仕尧[1] 

机构地区：[1]苏州大学附属第二医院苏州大学神经科学研究所,215004

出　　处：《辐射防护》2006年第1期24-28,34,共6页Radiation Protection

基　　金：国家自然科学基金资助课题(30170287);江苏省卫生厅重大科研课题(K2004067)

摘　　要：少突胶质细胞是中枢神经系统(CNS)电离辐射的重要靶细胞。了解少突胶质细胞的辐射损伤机制,对增强CNS对辐射耐受性、防护和治疗CNS的辐射损伤具有重要意义。本文介绍了电离辐射对少突胶质细胞膜的直接损伤、凋亡、氧化应激、诱导一系列基因表达、兴奋毒性损伤、神经营养因子缺乏、胶质细胞产物的作用等细胞机制,以及辐射诱导少突胶质细胞损伤的细胞凋亡信号转导及基因表达等分子机制。Oligodendrocytes are the target cells of ionizing radiation injury. Understanding the mechanism of radiation-induced oligedendrocytes injury may be of significance to increase the radiation tolerance, prevent and treat CNS injury induced by irradiation. The mechanisms of irradiation-induced oligodendrocyte injuryinvolve the direct injury to cell membrane, apoptosis, oxidative stress, the function of glial production, a series of gene expression induced by ionizing radiation, excitotoxin damage of oligodendrocyte and the deficiency of neurotrophic factors. The molecular mechanisms of the apoptosis signal transduction and gene expression induced by ionizing radiation are also reviewed in this paper.

关 键 词：少突胶质细胞 电离辐射 细胞与分子机制 

分 类 号：R741[医药卫生—神经病学与精神病学]