退火处理对ZnO薄膜晶体结构和导电性能的影响  

Effect of Annealing Process on Crystal Structure and Conduction Performance of ZnO Thin Film

作　　者：潘志峰[1] 袁一方[1] 李清山[2] 

机构地区：[1]上海理工大学光电学院 [2]曲阜师范大学物理工程学院,曲阜273165

出　　处：《光学与光电技术》2006年第1期52-54,共3页Optics & Optoelectronic Technology

基　　金：山东省教育厅科研发展计划(03C08)资助项目

摘　　要：利用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,将该样品进行退火处理,并测量了样品的导电性能,结果显示退火处理可以引起薄膜的重结晶,从而改善薄膜的结晶状况,改变薄膜中的化学配比。退火后样品的薄膜电阻相对较小,增加了薄膜中施主的浓度,增强了薄膜的导电性。C-axis uniquely oriented ZnO films are prepared by DC reactive magnetron sputtering on （100） Si substrate. The samples are annealed. The conduction performance of samples is measured. The results show that the second crystal of thin film is caused by annealing and the crystal condition of thin film is changed. The resistance of the samples after annealing is smaller comparatively. The donor＇s density of the film is increased and the conduction Performance is enhanced.

关 键 词：ZNO薄膜 晶体结构 导电性能 退火 

分 类 号：O484[理学—固体物理]