磁控溅射工艺参数对Pb(Zr,Ti)O_3薄膜织构的影响  

Effect of RF-sputtering prameters on txture in Pb(Zr,Ti)O_3 films

作　　者：杨帆[1] 孙跃[2] 李伟力[1] 费维栋[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001 [2]哈尔滨工业大学航天学院,黑龙江哈尔滨150001

出　　处：《功能材料》2006年第1期60-62,共3页Journal of Functional Materials

摘　　要：利用RF磁控溅射法制备了Pb(Zr,Ti)O3(PZT)铁电薄膜,利用X射线衍射(XRD)法研究了薄膜的相组成及溅射工艺参数对薄膜织构的影响。结果表明,在小靶基距时,过高溅射功率不利于获得纯钙钛矿相的PZT铁电薄膜。溅射功率及溅射气压影响PZT薄膜的织构及其织构散漫度,提高溅射气压及溅射功率,(111)织构漫散度随之提高。在靶基距为80mm时,选择150W、0.7Pa的溅射工艺可获得具有最佳(100)织构的PZT薄膜。Lead zirconate titanate （PZT） ferroelectric film was prepared by RF-magnetron sputtering route. The phase composition and the effect of sputtering parameter on the texture of the films were analyzed by X-ray diffraction （XRD） technique. The results of XRD results indicate that high sputtering power is not beneficial to deposit PZT thin films with pure perovskite structure,when the substrate-target distance is too short. The preferential orientation of PZT thin films is affected by the sputtering power and pressure. The misorientation degree of （111） texture increases with the sputtering pressure and sputtering power increasing. Highly oriented PZT films can be obtained under suitable sputtering conditions. When the substrate-target distance is 80ram, highly （100） textured PZT film can be obtained if the sputtering pressure of 0.7Pa and the sputtering power of 150W were selected.

关 键 词：磁控溅射 Pb(Zr Ti)O3薄膜 织构 

分 类 号：TM233[一般工业技术—材料科学与工程] TQ174[电气工程—电工理论与新技术]