用低纯碳化硅微粉烧结碳化硅陶瓷  

SILICON CARBIDE CERAMICS PREPARED WITH LOW PURE SILICON CARBIDE MICRO-POWDERS

作　　者：武七德[1] 孙峰[1] 吉晓莉[1] 田庭燕[2] 郝慧[1] 

机构地区：[1]武汉理工大学硅酸盐材料工程教育部重点实验室,武汉430070 [2]山东大学材料液态结构及其遗传性教育部重点实验室,济南250061

出　　处：《硅酸盐学报》2006年第1期60-64,共5页Journal of The Chinese Ceramic Society

摘　　要：用工业尾料低纯W3.5μmSiC微粉为原料,在N2保护下烧结碳化硅(SiC)陶瓷。研究了低纯SiC微粉中杂质对SiC陶瓷力学性能的影响,对比了微粉提纯后材料的性能与结构。通过扫描电镜、金相显微镜分析材料的显微结构。结果表明:微粉杂质中SiO2、金属氧化物在SiC烧结温度下的放气反应是影响陶瓷材料力学性能的主要因素。由低纯SiC粉制得的材料的烧结密度达到(3.15±0.01)g/cm3,抗折强度达到(441±10)MPa。Reaction-bonded silicon carbide （RBSC） ceramics were prepared with industrial scraps low purity SiC micro-powders. The average grain size of the powder is 3.5 μm. The influence of impurities of powders on the material＇s mechanical properties was studied, and a comparison was made to materials prepared with purifying powder by hydrochloric acid. The microstructure of silicon carbide ceramics was investigated by scanning electron microscope and optical microscope. The results show that the key factors to the material＇s mechanical properties are the excluding SiO2, and the metallic oxide reacted with other raw materials and released gas at high temperatures. The sintered density of the material made of low purity SiC is （3.15±0.01） g/cm^3 and the flexural strength is （441±10） MPa at room temperature.

关 键 词：碳化硅 反应烧结 显微结构 

分 类 号：TQ174[化学工程—陶瓷工业]