高功率二极管激光器失效特性研究  

Failure analysis of high power diode laser array

作　　者：高松信[1] 魏彬[1] 吕文强[1] 武德勇[1] 邵冬竹[1] 左蔚[1] 

机构地区：[1]中国工程物理研究院应用电子学研究所,四川绵阳621900

出　　处：《强激光与粒子束》2005年第B04期97-100,共4页High Power Laser and Particle Beams

基　　金：中国工程物理研究院基金资助课题

摘　　要：利用统计分析手段,对高功率二极管激光器封装中各工艺环节引起器件失效的原因进行了分析和归类。根据几种失效模式的分析结果,焊接空隙、结短路、腔面退化是引起高功率DL失效的主要模式,针对高功率二极管激光器失效的主要模式,对焊料沉积夹具及焊接工艺参数进行了改进和优化,大大提高了封装工艺水平,使封装的器件成品率由原来的77%提高到了85%以上。Using statistics analysis method, diode laser failure states were classified and the causes of these diode laser failures were analyzed in every packaging process. The result of the statistics analysis shows that the main causes of these failures are solder void, pn short circuit and facet damage. The packaging techniques were optimized and ameliorated and the production rate is improved from 77% to 85%.

关 键 词：二极管激光器 失效 腔面退化 封装 

分 类 号：TN248[电子电信—物理电子学]