砷离子注入CdTe薄膜热退火效应的共振喇曼与荧光光谱研究  

RESONANT RAMAN AND PHOTOLUMINESCENCE STUDIES OF THE ANNEALING EFFECTS OF THE As ION IMPLANTED CdTe FILMS

作　　者：张家明[1,2] 郭世平[1,2] 袁诗鑫 沈学础[1,2] 

机构地区：[1]中国科学院上海技术物理研究所 [2]红外物理国家实验室

出　　处：《红外与毫米波学报》1996年第1期23-28,共6页Journal of Infrared and Millimeter Waves

摘　　要：应用共振喇曼和荧光光谱系统地研究了Ａｓ离子注入ＣｄＴｅＭＢＥ外延膜的热退火行为．发现随着退火温度（ＴＡ）升高至４４０℃，其晶格恢复和缺陷态消除得最完整，当ＴＡ高于４４０℃，晶格质量陡峭地下降，ＴＡ越高，越多的Ａｓ占据Ｔｅ位作为Ｔｅ位受主。Resonant Raman scattering and photoluminescence spectra were used to study the annealing effects of the As ion implanted (211) CdTe epilayers grown by molecular beam epitaxy.It was found that the best removal of the implantation induced damages and recovery of the lattice perfection can be obtained when the annealing temperature T A is high up to 440℃,while the lattice perfection drops sharply when T A is higher than 440℃.With an increase of T A in the studied range,more and more As atoms occupy the Te sites as acceptors and the fitted compensation coefficient becomes samller,which means that the hole concentration becomes higher.

关 键 词：光谱 离子注入 热退火 散射谱 荧光谱 碲化镉 砷 

分 类 号：TN304.22[电子电信—物理电子学] TN305.3