Al_yGa_(1-y)As/Al_xGa_(1-x)As量子阱激光器材料的光致荧光谱  

PHOTOLUMINESCENCE SPECTRA OF AlyGa1 QUANTUM WELL FOR LASERS

作　　者：程文芹[1] 蔡丽红[1] 谢小刚[1] 王文新 胡强[1] 周钧铭[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《物理学报》1996年第2期304-305,共2页Acta Physica Sinica

摘　　要：测量了Al_yGa_(1-y)As/Al_x Ga_(1-x)As量子阱激光材料的光致荧光谱.发现在室温连续激光器材料的光致荧光谱中有两个峰,而不能激射的材料中则只有一个很宽的峰.将高能峰归属于准费密能级电子的跃迁.The photoluminescence spectra of AlyGa1-yAs/AlxGa1-xAs (0<y<0.3) quantum well materials for lasers were measured at room temperature and liquid nidrogen temperature. There are two peaks in the spectra of the materials from which the lasers operated continuously at room temperature were fabricated. The peak on the high energy side was attributed to the recombination of electrons at quasi-Fermi energy level. There was only one wide peak in the spectra of the material the diodes prepared with such material can not be stimulated.

关 键 词：量子阱 激光器材料 光致荧光谱 

分 类 号：TN244[电子电信—物理电子学]