高补偿单晶硅NTCR镀Ni电极欧姆接触的研究  

Ohm Contact of Ni Electrode Platinged on the High Compensation Single Crystal Si NTCR

作　　者：崔志明[1] 陈朝阳[1] 巴维真[1] 蔡志军[1] 丛秀云[1] 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011

出　　处：《电子元件与材料》2006年第3期53-55,共3页Electronic Components And Materials

基　　金：乌鲁木齐市重点科技攻关项目(项目编号:G0401202);中国科学院"西部之光"人才培养计划项目

摘　　要：采用4.5Ω.cm的p型单晶硅,通过高温气相扩散法将锰掺入硅中,得到高补偿单晶硅。用化学沉积法,在高补偿单晶硅材料的表面镀金属镍膜,经500℃退火15 min,制成Ni电极。用SEM和XPS对电极进行分析,并测试材料的I-V特性曲线。结果表明:经退火后镍与硅形成硅镍化合物(Ni2Si),电极正反向电阻一致,性能稳定,形成欧姆接触。High compensation Si was adopted by diffusing Mn into p-type single crystal Si of 4.5Ω·cm at high temperature. By the chemical deposit method, metal nickel was deposited on the high compensation p-type single crystal Si disc. The sample was annealed at 500℃, 15 min. The Ni electrodes were also analyzed using SEM and XPS, and the characteristic curve of I-V was measured. Experimental results show that Ni2Si compound is emerged between Si and Ni by anneal, positive and negative resistance of the electrode is unanimous and ohm contact is formed,

关 键 词：电子技术 高补偿硅 化学沉积法 硅镍化舍物 

分 类 号：TN304[电子电信—物理电子学]