半导体功率发光二极管温升和热阻的测量及研究  

Study of Thermal Characteristics of Semiconductor Light-Emitting Devices

作　　者：张跃宗[1] 冯士维[1] 谢雪松[1] 李瑛[1] 杨集[1] 孙静莹[1] 吕长志[1] 

机构地区：[1]北京工业大学电子信息与控制学院,北京100022

出　　处：《Journal of Semiconductors》2006年第2期350-353,共4页半导体学报（英文版）

摘　　要：通过电学测量方法得到了半导体功率发光二极管温升与热阻的加热响应曲线.曲线出现一个或多个台阶,反映了其内部的热阻构成与器件物理结构.同时采用遮光法对器件温升及热阻进行了修正.还应用瞬态加热响应原理对功率管的封装结构进行了监测.The heating response curves of temperature rise and thermal resistance of semiconductor power emitting-lighting diodes are obtained according to electrical methods. The curve shows one or more sidesteps to reflect device＇s inside thermal resistance constitution and physical structure, The temperature rise and thermal resistance are amended with a covering method. A transient heating response theory is also used to inspect the package structure of the devices.

关 键 词：温升 热阻 工作寿命 可靠性 发光效率 

分 类 号：TN312.8[电子电信—物理电子学]