500℃下利用UHV/CVD在Si衬底上直接生长近平面Si_(0.5)Ge_(0.5)层(英文)  

Growth of near planar Si_(0.5)Ge_(0.5) epitaxial layers directly on Si substrate by UHV/CVD at 500℃

作　　者：赵雷[1] 左玉华[1] 李传波[1] 成步文[1] 罗丽萍[1] 余金中[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所集成光电国家重点实验室,北京100083

出　　处：《功能材料与器件学报》2006年第1期5-9,共5页Journal of Functional Materials and Devices

基　　金：NationalScienceFoundationofChina(No.60336010,No.90401001)and973Programs(No.TG2000036603)

摘　　要：利用UHV/CVD系统,在一个相对较低的温度500℃下,研究了Si1-xGex层中的Ge含量与生长条件之间的关系,此时的Si1-xGex层处于一种亚稳的状态。并直接在Si衬底上生长制备了10个周期的3.0 nm-Si0.5Ge0.5/3.4 nm-Si多量子阱。拉曼谱、高分辨显微电镜和光荧光谱对其结构和光学性能进行的表征表明这种相对较厚的Si0.5Ge0.5/Si多量子阱结构基本上仍是近平面生长的,内部没有位错,其在电学和光学器件上具有潜在的应用。The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.

关 键 词：UHV/CVD 拉曼测量 光荧光 Si0.5Ge0.5 

分 类 号：TN304.2[电子电信—物理电子学]