基于p型多孔硅的一维光子晶体的微结构分析  

Microstructural analysis of 1-D photonic crystal based on p-type porous silicon

作　　者：包晓清[1] 钱敏[1] 王连卫[1] 朱自强[1] 

机构地区：[1]华东师范大学信息学院电子系,上海200062

出　　处：《功能材料与器件学报》2006年第1期59-62,共4页Journal of Functional Materials and Devices

基　　金：上海市自然科学基金资助(03ZR14023);上海市AM基金0409资助

摘　　要：经由阳极氧化实现了p型硅基的60周期(120层)反射结构,并在此基础上成功制作了基于一维光子晶体的全反射镜,其中心反射波长位于1.6μm左右,反射率几乎为100%的禁带带宽约为0.25μm。Anodization of p - type silicon were carried out and porous p - type silicon omnidirectional mirror （OM） based on one dimensional photonic crystal were materialized. This OM demonstrates a photonic band gap （PBG） as wide as 0.25μm, while its midgap wavelength is about 1.61μm, which is very near to the most important band centered at 1.5 μm for communication industry.

关 键 词：光子晶体 全反射镜 阳极氧化 多孔硅 

分 类 号：TB383[一般工业技术—材料科学与工程]