Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth  

作　　者：REN Bingyan ZHAO Long ZHAO Xiuling WANG Huixian CAO Zhongqian ZHU Huimin FU Hongbo 

机构地区：[1]School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China [2]Hebei Ningjin Jinglong Semiconductor Factory, Ningjin 055550, China [3]Yunnan Semiconductor Device Factory, Kunming 650033, China

出　　处：《Rare Metals》2006年第1期7-10,共4页稀有金属（英文版）

基　　金：This project is financially supported by the National Natural Science Foundation of China (No. 60576002).

摘　　要：φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski （CZ） furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment resuits were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski （CZ） furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment resuits were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.

关 键 词：inorganic non-metal material CZSI numerical simulation guide shell oxygen concentration 

分 类 号：O613.72[理学—无机化学] TB321[理学—化学]