掺钇二氧化锆薄膜制备及其特性测量  

Preparation and character measurements of Y_2O_3-doped ZrO_2 films

作　　者：任树喜[1] 马洪良[2] 徐国庆[2] 高召顺[2] 周炯[2] 张义炳[2] 

机构地区：[1]河北工业大学理学院,天津300130 [2]上海大学物理系,上海200436

出　　处：《原子与分子物理学报》2006年第1期173-176,共4页Journal of Atomic and Molecular Physics

摘　　要：采用电子束蒸发法在室温下制备出掺钇二氧化锆薄膜.借助紫外分光光度计、原子力显微镜(AFM)、X射线衍射(XRD)方法研究了薄膜的透射率、表面结构.同时研究了不同退火温度下对薄膜光学性质的影响.研究的结果表明:退火温度的增加,使得二氧化锆薄膜的漏电流增大,从而导致其热稳定性变差.不同浓度三氧化二钇的掺杂对其透射率影响很小.Y2O3-doped ZrO2 films were deposited on SiO2 substrates using high vacuum electron beam evaporation at room temperature. The films transmittance and surface structure were investigated by means of Ultraviolet spectrophotometer, AFM and XRD. The effect of annealing in different temperatures on the optical properties of the films has been studied as well. The research result indicates that ZrO2 films leakage current increases with annealing temperature. And this cause its hot stability become bad. The ratio of Y2O3 has a little effect on transmittance.

关 键 词：电子束蒸发 掺钇氧化锆薄膜 退火温度 透射率 

分 类 号：O43[机械工程—光学工程]