等离子体增强热丝CVD生长碳纳米尖端的研究  

Growth of carbon nanotips by plasma-enhanced hot filament chemical vapor deposition

作　　者：王必本[1] 徐幸梓[1] 张兵[2] 

机构地区：[1]重庆大学材料科学与工程学院,重庆400044 [2]北京工业大学应用数理学院,北京100022

出　　处：《物理学报》2006年第2期941-946,共6页Acta Physica Sinica

基　　金：教育部留学回国人员科研启动基金资助的课题.~~

摘　　要：用CH_4,NH_3和H_2为反应气体,利用等离子体增强热丝化学气相沉积系统在不同偏压电流的条件下制备了碳纳米尖端,并用扫描电子显微镜和显微Raman光谱仪对碳纳米尖端进行了研究.结果表明碳纳米尖端是石墨结构,随着偏压电流的增大,碳纳米尖端的顶角减小,生长速率增大.结合有关等离子体和溅射的理论,分析讨论了碳纳米尖端的形成和碳纳米尖端的生长随偏压电流的变化.Carbon nanotips were prepared by plasma-enhanced hot filament chemical vapor deposition under different bias current using CH4, NH3 and H2 as the reaction gases, and investigated by scanning electron microscopy and micro-Raman spectrometer. The results indicate that the carbon nanotips have graphite structure. With increasing of the bias current, the tip angles of the carbon nanotips are reduced and their growth rate are increased. Combined with theory related to plasma and sputtering, the formation of the carbon nanotips and the change of their growth rate with the bias current are discussed.

关 键 词：碳纳米尖端 等离子体 化学气相沉积 

分 类 号：TB383.1[一般工业技术—材料科学与工程]