相变域硅薄膜材料的光稳定性  

Stability of mixed phase silicon thin film material under light soaking

作　　者：王岩[1] 韩晓艳[1,2] 任慧志[1] 侯国付[1] 郭群超[1] 朱锋[1] 张德坤[1] 孙建[1] 薛俊明[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电信息技术科学教育部重点实验室,光电子薄膜器件与技术天津市重点实验室 [2]河北工业大学材料科学与工程学院,天津300130

出　　处：《物理学报》2006年第2期947-951,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:G2000028202;G2000028203);科技部国际合作项目(批准号:2002DFG0051);天津市国际合作项目(批准号:023100711);天津市科技攻关项目(批准号:043186511)资助的课题.~~

摘　　要：采用RF-PECVD技术,通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料,研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验,在分析光照前后光电特性变化规律的基础上,认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定,衰退率较少;高晶化率微晶硅材料性能稳定,基本不存在光衰退;在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退,但相比高晶化率硅材料来说更适合制备高效微晶硅电池.Silicon thin films material with different crystalline ratio （ Xc ） have been deposited with varying silane content of source gases in the PECVD process. We have researched how hydrogen content affects the material and the relationship between micro- structure and optoelectronic properties. Light soaking experiment was then performed. By comparing the changes in the properties before and after irradiation, we conclude that the amorphous region is responsible to the degradation of the photoelectronic property. The mixed phase amorphous silicon degrades less and is more stable than component the common amorphous silicon. The highly crystallized silicon is stable against light soaking. The microcrystalline silicon near the threshold is not so stable as the highly crystallized one, but its optoelectronic property is more suitable than the others for making microcrystalline silicon solar cells.

关 键 词：射频等离子体增强化学气相沉积 硅薄膜 Staebler—Wronski(SW)效应 稳定性 

分 类 号：TB383.2[一般工业技术—材料科学与工程]