低烧ZnO-TiO_2微波陶瓷介电特性及片式多层带通滤波器研究  

The Study of Dielectric Properties of ZnO-TiO_2 Microwave Ceramic Sinterd at Low-temperature and Chip Multilayer Bandpass Filter

作　　者：张启龙[1] 杨辉[1] 邹佳丽[1] 陆德龙 

机构地区：[1]浙江大学材料与化工学院,杭州310027 [2]浙江正原电气股份有限公司,嘉兴314003

出　　处：《微波学报》2006年第1期65-70,共6页Journal of Microwaves

基　　金：863计划重点项目(2003AA302760);浙江省重大科技计划项目(2005C21038)

摘　　要：采用材料特性、器件设计及制备工艺相结合的三位一体研究模式，研究了低烧ZnO-TiO2微波陶瓷介电特性，利用高频结构仿真软件HFSS对低烧陶瓷带通滤波器微波特性进行建模，重点介绍材料介电特性对片式带通滤波器性能影响的优化仿真，采用LTCC制造工艺技术制备片式多层带通陶瓷滤波器。研究结果表明：ZnO-TiO2微波陶瓷在895～910℃烧结。陶瓷相ZnTiO3、TiO2稳定存在。具有较佳的微波介质特性。在900℃烧结3h。其介电性能：εr=27．05、Of=19822GHz、τf=2ppm／℃。该材料与Ag电极能较好匹配。模拟仿真表明：低烧材料的相对介电常数偏差是器件设计制备中的关键要素，仿真优化结果与LTCC试验样品的测试结果吻合较好。制备出的片式多层带通滤波器适用于表面贴装技术。The research mode which includes material properties, components design and preparation technics was adopted. Firstly, The dielectric properties of ZnO-TiO2 microwave ceramic sinterd at low-temperature was studied. Secondly, commercial 3D electromagnetic analysis software HFSS were used to model, simulate and optimize for the microwave characteristics of chip multilayer bandpass filter. Lastly, chip multilayer bandpass filter were preparated by LTCC technology. For ZnO-TiO2 ceramic sintered at temperature from 895 to 910℃, hexagonal ZnTiO3 and rutile （TiO2 ） lies stably. The εr value of 27.05, Qf value of 19,822 （ at 6GHz ） and τf value of 2ppm/℃ were obtained for ZnO-TiO2 ceramics sintered at 900℃ for 3h. The material is compatible with Ag electrodes. The simulation indicates that dielectric constant warp is key factor to the design and preparation of chip mulilayer bandpass filter. The simulations were shown to be in good agreement with the experimental results. The chip multilayer bandpass filter in this paper is suitable for SMT.

关 键 词：低温共烧陶瓷 ZnTiO3 滤波器 片式多层结构 

分 类 号：TM28[一般工业技术—材料科学与工程]