Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature  

作　　者：HE Deyan WANG Xiaoqiang CHEN Qiang LI Junshuai YIN Min A. V. Karabutov A. G. Kazanskii 

机构地区：[1]Department of Physics, Lanzhou University, Lanzhou 730000, China [2]General Physics Institute, Vavilova str. 38, iv119991 Moscow, Russia [3]Moscow State University, Vorobyevy Gori, 119992 Moscow, Russia

出　　处：《Chinese Science Bulletin》2006年第5期510-514,共5页

基　　金：supported by the National Natural Science Foundation of China(Grant No.10175030);Natural Science Foundation of Gansu Province(Grant No.4WS035-A72-134).

摘　　要：硅薄电影被诱导地联合的血浆 CVD 在房间温度扔。拉曼光谱和原子力量显微镜学被用来描绘样品的结构和地形学。在最佳血浆条件下面， nano-crystallineSi 电影与在表面上的随机的分布的高密度的 Si 尖端是成年的，这被显示出。高度和 Si 尖端的吝啬的基础直径分别地是 30-40 nm 和约 200 nm。有如此的表面地形学的电影被表明有电子领域排放的好行为。典型阀值地关于 7-10 V/mu m。Silicon thin films were deposited by inductively coupled plasma CVD at room temperature. Raman spectrum and atomic force microscopy were used to characterize the structure and topography of the samples. It was shown that, under the optimum plasma conditions, nano-crystalline Si film was grown with high-density Si tips in a random distribution on surface. The height and the mean basal diameter of the Si tips were 30-40 nm and -200 nm, respectively. The film with such a surface topography was demon- strated to have good behavior of electron field emission. The typical threshold field is about 7-10 V/μm.

关 键 词：纳米晶硅薄膜 电子场发射 感应耦合等离子体 化学气相沉积 低温生长 ICP-CVD 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.1[理学—固体物理]