纳米硅带尾态能量分布及其光学带隙  

THE ENERGY DISTRIBUTION OF BAND TAIL STATES OF nc Si AND ITS OPTICAL GAP

作　　者：张治国[1,2] 宿昌厚[1,2] 

机构地区：[1]内蒙古工业大学电力学院自动化系 [2]北京工业大学电子工程系

出　　处：《太阳能学报》1996年第2期175-180,共6页Acta Energiae Solaris Sinica

摘　　要：假定纳米硅的格点势远小于晶界组元所形成的散射势垒，用Ｋｒｏｎｉｇ－Ｐｅｎｎｅｙ模型对纳米硅的带尾态进行计算，发现纳米硅带尾态并不连续。利用计算结果解释了纳米硅和微晶硅、多晶硅及单晶硅相比有较宽的光学带隙和较小的电导的现象。In this paper,the band tail states of nc Si is computed with the Kronig Penney model based on the hypothesis of the lattice potential much lower than the scatterng potential of grain bowndary of nc Si.The results show that the band tail states are not continuative and explain why the optical gap of nc Si is broader than that of μ Si, p Si and c Si,while the conductivity of nc Si is lower than that of μ Si,p Si and c Si.

关 键 词：纳米硅 带尾态 光学带隙 电导 能量分布 

分 类 号：O48[理学—固体物理]