硼离子掺杂类金刚石薄膜及 C（B）／n-Si 异质结光伏特性  

DIAMOND-LIKE CARBON FILMS DOPED WITH B IONS AND PHOTOVOLTAIC PROPERTY OF C(B)/n-Si HETEROJUNCTION

作　　者：周之斌[1] 杜先智[1] 张亚增[1] 杨峰[1] 崔容强[2] 

机构地区：[1]安徽师范大学物理系 [2]西安交通大学

出　　处：《太阳能学报》1996年第2期197-200,共4页Acta Energiae Solaris Sinica

摘　　要：采用直流弧光放电等离子ＰＣＶＤ法，沉积获得硼掺杂类金刚石薄膜，该材料ｐ型半导体，电阻率５—１０Ωｃｍ。俄歇（Ａｕｇｅｒ）电子能谱测试表明，硼离子含量为０．８％，由扫描电镜（ＳＥＭ）和激光喇曼（Ｒａｍａｎ）谱分析可知，薄膜以非晶为主，观察到许多线径为０．５—１．０μｍ的金刚石结晶微粒。制备成Ａｕ／Ｃ（Ｂ）／ｎ－Ｓｉ异质结，其开路电压Ｖｏｃ＝５８０ｍＶ，短路电流密度为６５０μＡｃｍ－２，获得暗Ｉ－Ｖ整流特性和光照Ｉ－Ｖ工作曲线。Using arc discharge plasma CVD(PCVD)method,diamond-like carbon film doped with B ions has been deposited.The p-type film semeconductor,with ρ=0.510Ωcm.Observing by SEM and laser Raman spectrum the film is amorphous and has some micro-crystal line diamond grain (0.5～1.0μm).Au/C(B)/n-Si heterojunction solar cells have been fabricated.Dark I-V rectifying curve and working curve (under 100mWcm -2 illumination)of device are given, V oc =580mV and I sc =650μAcm -2 have been measured.

关 键 词：类金刚石薄膜 异质结 光伏特性 

分 类 号：TN304.18[电子电信—物理电子学]