1.3μm InGaAsP/InP双异质结激光器阈值电流与温度的关系  

Temperature Dependence of Threshold Current in 1.3μ/m InGaA.sP/InP Double Heterostrueture Lasers

作　　者：陈其道[1] 

机构地区：[1]重庆光电技术研究所,重庆永川632163

出　　处：《半导体光电》1990年第2期156-161,共6页Semiconductor Optoelectronics

摘　　要：测量了1.3μm InGaAsP/InP DC-PBH 激光器在直流工作条件下,阀值电流密度随温度的变化。应用电子从四元有源区泄漏入 InP 限制层的机理讨论了实验结果。Measurements are made on the temperature dependence of threshold current density in DC-PBH 1.3μm InGaAsP/InP laser under direct current.The experimental results are discussed in terms of mechanism of electron leakage from the quatemary active region into the InP confining lay.

关 键 词：激光器 阈值电流 温度 INGAASP/INP 

分 类 号：TN248.4[电子电信—物理电子学]