砷注入硅中高温瞬态热退火研究  

Study on High Temperature Instantaneous Thermal Annealing in As-Implanted Si

作　　者：周冠山 

机构地区：[1]航空工业部○一四中心,洛阳471009

出　　处：《半导体光电》1990年第3期286-288,共3页Semiconductor Optoelectronics

摘　　要：本文采用阳极氧化法剥层技术和扩展电阻法研究了砷离子注入硅中的高温瞬态热退火行为;测定了退火后杂质分布结深和杂质激活率,并与理论结果进行了比较。结果表明:120keV 砷注入5×10^(15)cm^(-2),经1180℃3分钟退火后,杂质激活率和再分布情况都比较理想。本研究首次采用扩散炉进行高温热退火。Invesigation is carried out on the behaviour of high temperature inasian- taneous thermal annealing in As-implanted Si by using SRM.The junction depth of impurity distribution after annealing is measured as well as the impurity activation rate,and compared with the theoretical results.It is shown that both the impurity activation rate and redistribution are considerably satisfactory as a reslt of As-implan- tation with a dose of 5×10^(15)cm^(-2)at 120 keV for 3 minute annealing at tempera- ture of 1180℃.A diffusion furnace is used for the first time in the present investigation for high temperature instantaneous thermal annealing.

关 键 词：砷 硅 热退火 离子注入 半导体 

分 类 号：TN305.3[电子电信—物理电子学]