Ku波段GaAs微波单片集成电路  

Ku-Band GaAs Microwave Monolithic Integrated Circuits

作　　者：邓鸿章 张慕义 张玉清 

出　　处：《半导体情报》1990年第2期9-11,共3页Semiconductor Information

摘　　要：本文介绍Ku波段GaAs单片集成电路的设计、研制和测量结果。该单片电路的匹配网络采用对FET进行计算机分析和电路模拟相结合的方法进行设计。研制成功了一个两级单片电路,其尺寸为1.9×3.2×0.1mm,在14.5～15.4GHz的频率范围内,输出功率P_0≥100mW,增益G_P≥5dB,带内增益起伏△G_P≤±0.75dB。The design, fabrication and measured result of Ku-band GaAs monolithic IC are described in this paper. The matching networks of this circuit have been designed with the method of combining computer analyzing and circuit modeling to FET. A two-sta-ge monolithic circuit has been successfully fabricated into a chip with dimensions of 1.9×3.2×0.1mm. This type of MMIC operates in the range of frequency 14.5～15.4GHz, with output power P_0≥100mW, gain G_p≥5dB and the gain flatness in the same frequency band △G_p≤±0.75dB.

关 键 词：单片 集成电路 GAAS 微波 KU波段 

分 类 号：TN43[电子电信—微电子学与固体电子学]