β-Ga_2O_3单晶浮区法生长及其光学性质  

Floating zone technique growth of β-Ga_2O_3 single crystals and their optical properties

作　　者：张俊刚[1] 夏长泰[1] 吴锋[1] 裴广庆[1] 徐军[1] 邓群[2] 徐悟生[2] 史宏生 

机构地区：[1]中国科学院上海光学精密机械研究所 [2]通用电气中国研究开发中心有限公司,上海201203

出　　处：《功能材料》2006年第3期358-360,363,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50472032)

摘　　要：用浮区法生长得到了宽禁带半导体材料β-Ga2O3单晶,对其吸收光谱、荧光光谱进行了分析。解释了禁带部分展宽的原因。并研究了Sn4+和Ti4+的掺杂对其紫外吸收边影响。-βGa2O3单晶的荧光谱不仅观察到了3个特征峰:紫外光(395nm)、蓝光(471nm)、绿光(559nm),还观察到了在277和297nm的紫外光和692nm的红光荧光发射。β-Ga2O3 single crystals, the wide band gap semiconductor, were grown using floating zone technique. Their optical absorption and fluorescence spectra were studied and explained the reason for the part broaden of absorption spectra. The dopants＇ （Sn^4＋ and Ti^4＋ ） affections on UV absorption spectra were also studied. Not only the three characteristic emission bands of β-Ga2O3 single crystal, but the bands peaked at 277,297 and 692nm were observed in luminescence.

关 键 词：浮区法 宽禁带半导体 β-Ga2O3单晶 

分 类 号：O782[理学—晶体学]