激光烧蚀制备纳米Si晶粒尺寸均匀性与靶衬间距的关系  

Relation between target-substrate separation and size-uniformity of Si nanoparticles prepared by laser ablation

作　　者：金成[1] 王文军[2] 冯秀娟[1] 王英龙[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002 [2]保定师范专科学校物理系,河北保定071000

出　　处：《华北电力大学学报（自然科学版）》2006年第2期109-111,共3页Journal of North China Electric Power University：Natural Science Edition

摘　　要：为了对纳米Si薄膜中晶粒尺寸的分布进行定量研究,首次提出“晶粒尺寸均匀度”的概念,并对Lowndes等人采用脉冲激光烧蚀方法制备纳米Si薄膜的实验结果进行了定量分析。结果表明,随着靶衬间距的增大,晶粒尺寸均匀度先减小后增大,也就是说,存在靶衬间距的最佳值,使所制备的纳米Si晶粒的尺寸均匀性最好。MonteCarlo模拟结果对这一结论进行了解释。To quantificationaUy study the sized distribution of Si nanoparticles in thin films, ＂uniformity-degree＂ is used to analyze the experimental results on nanocrystalline Si films prepared by pulsed laser ablation authorized by Lowndes. The rcsuits show that while increasing target-substrate separation, ＂uniformity-degree＂of Si nanoparticles decreases. There is an optimization target,substrate separation to induce the most uniform, sized nanoparticles, which is explained by the results of Monte Carlo method.

关 键 词：纳米SI晶粒 脉冲激光烧蚀沉积 靶村间距 尺寸分布 晶粒尺寸均匀度 

分 类 号：O78[理学—晶体学] TN304.12[电子电信—物理电子学]