砷化镓材料中EPR“As_(Ga)”的退火行为  

Annealing Behaviours of EPR "AsGa" in GaAs

作　　者：汪光裕[1] 邹元燨 S.Benakki E.Christoffel A.Goltzene B.Meyer C.Schwab 

机构地区：[1]中国科学院上海冶金研究所 [2]Centre de Recherches Nucleaires Universite Louis Pasteur

出　　处：《Journal of Semiconductors》1990年第3期221-226,共6页半导体学报（英文版）

摘　　要：本文比较了中子辐照。压缩变形和原生LEC砷化镓等三种不同来源样品的EPR“As_(Ga)”的Hamiltonian参数。并系统地研究了EPR“As_(Ga)”的浓度和低温光猝灭行为随退火温度的变化,从而进一步验证了EPR“As_(Ga)”的本性,即除孤立As_(Ga)反位原子外,还可能包括As_(Ga)的一些空位络合物。这些不同本性的EPR“As_(Ga)”缺陷及其它有关的缺陷在样品热处理过程中可能相互转化。按照物理化学中Le Chatlier原理,缺陷的原始浓度和晶体内部应变能似应是引起这些转化反应的重要因素。Comparisons of Hamiltonian parameters of the EPR 'As_(Ga)'in three kinds of GaAs samples(neutron-irradiated, plastically deformed and as-grown LEC) have been made. The variationsof concentration and photoquenching behaviour of the EPR 'As_(Ga)' defects with annealingtemperature have systematically been investigated. The experimental results reported in thispaper further verify the nature of EPR 'As_(Ga)' defects, namely, they may include some vacancycomplexes of the As_(Ga) antisite besides the isolated one.These results indicate that the conversionsbetween the EPR 'As_(Ga)' defects and the other related point defects may take place duringannealing for the above-mentioned samples.They may be interpreted by means of Le ChatelierPrinciple in physicochemistry,the original concentrations of these defects and the strainenergy in crystals seeming to be the important factors for these conversion reactions.

关 键 词：砷化镓 电子顺磁共振 退火 点缺陷 

分 类 号：TN304.23[电子电信—物理电子学]