静压下GaAs_(1-x)P_x混晶的喇曼散射  

Raman Scattering of GaAs_(1-x)P_x Mixed Crystals under Hydrostatic Pressure

作　　者：李国华[1] 韩和相[1] 汪兆平[1] 糜东林 郑健生[2] 

机构地区：[1]中国科学院半导体研究所 [2]厦门大学物理系

出　　处：《Journal of Semiconductors》1990年第9期709-712,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：在77K下和0—60kbar静压范围内测量了GaAs_(1-x)P_x(0.76 ≤x≤1)混晶的喇曼散射谱。得到了这些混晶的类GaP的LO模的压力系数。发现在所研究的x范围内GaAs_(1-x)P_x混晶的类GaP的LO模的压力行为与Gap的LO模基本相同。利用测得的压力系数计算了类GaP的LO模的模式Gruneisen参数。The Raman scattering spectra of GaAs_(1-x)P_x (0.76≤x≤)mixed crystals have been measured under hydrostatic pressure ranging from 0 to 70 kbar at 77 K. The pressure coefficients of GaP-like LO modes of GaAs_(1-x) P_x mixed crystals is obtaind.It is found that the pressure behaviour of GaP-like LO modes of GaAs_(1-x)P_x mixed crystals is similar to that of LO mode of GaP crystal. The mode-Gruneisen parameters of GaP-like LO modes of GaAs_(1-x)P_x mixed crystals have been calculated from the measured pressure coefficients.

关 键 词：GAASP 混晶 压力 喇曼散射 

分 类 号：TN304.23[电子电信—物理电子学]