Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices  

作　　者：戴振宏 倪军 

机构地区：[1]Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, Beijing 100084 [2]Department of Physics, Yantai University, Yantai 264005

出　　处：《Chinese Physics Letters》2006年第4期960-963,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10404022, and the National Basic Research Programme of China under Grant No G2000067107.

摘　　要：We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.

关 键 词：QUANTUM-WELL INTRINSIC BISTABILITY ELECTRICAL CHARACTERIZATION TRANSPORT DYNAMICS STATES RANGE 

分 类 号：O413[理学—理论物理]