QUANTUM-WELL

作品数：62被引量：54H指数：3
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相关作者：周帆赵玲娟王圩朱洪亮李联合更多>>
相关机构：中国科学院更多>>
相关期刊：《Journal of Modern Physics》《Science China Mathematics》《光学学报》《Communications in Theoretical Physics》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>
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Ge_(0.92)Sn_(0.08)/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate被引量：1
《Photonics Research》2023年第10期1606-1612,共7页SHAOTENG WU LIN ZHANG RONGQIAO WAN HAO ZHOU KWANG HONG LEE QIMIAO CHEN YI-CHIAU HUANG XIAO GONG CHUAN SENG TAN 
CAS Project for Young Scientists in Basic Research(YSBR-026);National Research Foundation Singapore under its Competitive Research Program(NRFCRP19-2017-01);Ministry of Education-Singapore Ac RF Tier 2(T2EP50121-0001(MOE-000180-01));Ministry of Education-Singapore Ac RF Tier 1(2021-T1-002-031(RG112/21))。
The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics.Recently,the Ge Sn alloy has been identified as a promising candidate for...
关键词：quantum EMITTER OVERCOME 
Quantum correlations and optical effects in a quantum-well cavity with a second-order nonlinearity
《Communications in Theoretical Physics》2021年第11期93-101,共9页H Jabri 
In this paper,we investigate the photon correlations and the statistical properties of light produced by an optical cavity with an embedded quantum well interacting with squeezed light.We show that the squeezed source...
关键词：quantum-well cavity second-order nonlinearity quantum fluctuations nonclassical effects 
Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids被引量：1
《Science China(Technological Sciences)》2021年第7期1583-1588,共6页DU JinJuan XU ShengRui PENG RuoShi FAN XiaoMeng ZHAO Ying TAO HongChang SU HuaKe NIU MuTong ZHANG JinCheng HAO Yue 
supported by the Key Research and Development Program in Shaanxi Province (Grant Nos. 2018ZDCXL-GY-01-02-02 and 2018ZDCXLGY-01-07);Wuhu and Xidian University Special Fund for Industry University Research Cooperation (Grant No. XWYCXY-012020007);the National Natural Science Foundation of China (Grant No. 62074120);the Fundamental Research Funds for the Central Universities;the Innovation Fund of Xidian University。
InGaN/GaN multiple quantum-well(MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO_2 stripe patterns along the [11-20] and [1-100] directions as a mask. The sur...
关键词：InGaN/GaN MQWs SiO_2 mask stripes optical characteristic inclined quantum-well sidewall air voids 
Research progress in terahertz quantum-cascade lasers and quantum-well photodetectors被引量：3
《Chinese Physics B》2020年第8期59-71,共13页Zhi-Yong Tan Wen-Jian Wan Jun-Cheng Cao 
the National Key R&D Program of China(Grant No.2017YFA0701005);the National Natural Science Foundation of China(Grant Nos.61927813,61775229,61704181,and 61991432);the Shanghai International Cooperation Project,China(Grant No.18590780100).
As semiconductor devices,the terahertz quantum-cascade laser is a coherent source based on intersubband transitions of unipolar carriers while the terahertz quantum-well photodetector is a kind of detector which match...
关键词：TERAHERTZ semiconductor device photoelectric characterization imaging system 
Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates被引量：3
《Photonics Research》2020年第6期899-903,共5页LINZHI PENG Xu LI ZHI LIU XIANGQUAN LIU JUN ZHENG CHUNLAI XUE YUHUA ZUO BUWEN CHENG 
National Key Research and Development Program(2018YFB2200103,2018YFB2200501);National Natural Science Foundation of China(61674140,61675195,61774143,61975196);Key Research Program of Frontier Sciences(QYZDY-SSW-JSC022).
A horizontal p-i-n ridge waveguide emitter on a slion(100)substrate with a Gen,g1Sno.c9/Ge multi quantum-well(MQW)active layer was fabricated by molecular beam epitaxy.The device structure was designed to reduce light...
关键词：WAVEGUIDE temperature. GeSn 
Perovskite Light-Emitting Diodes被引量：1
《CCS Chemistry》2020年第4期859-869,共11页Chenyang Zhao Dezhong Zhang Chuanjiang Qin 
supported by the Young 1000 Talents Global Recruitment program of China and Chinese Academy of Sciences.
Perovskites show exciting potential for photoelectric applications,especially for light-emitting diodes(LEDs),owing to their intrinsically high photoluminescence efficiency and color purity.With efforts made over the ...
关键词：lead-halide PEROVSKITE defect passivation carrier balance outcoupling RADIATIVE recombination QUANTUM-WELL structure stability PEROVSKITE LIGHT-EMITTING diodes 
Ultra-flat broadband micro wave frequency comb generation based on optical frequency comb with a multiple-quantumwell electro-absorption modulator in critical state被引量：3
《Frontiers of Optoelectronics》2019年第4期382-391,共10页Cong SHEN Peili LI Xinyuan ZHU Yuanfang ZHANG Yaqiao HAN 
Related studies were supported by the National Natural Science Foundation of China(Grant No.61275067).
In this paper,we proposed a novel ultra・flat broadband microwave frequency comb(MFC)generation based on optical frequency comb(OFC)with a multiplequantum-well electroabsorption modulator(MQW-EAM)in critical state.The ...
关键词：microwave frequency comb(MFC) multiplequantum-well electro-absorption modulator(MQW-EAM) FLATNESS 
Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates
《Chinese Physics Letters》2018年第9期90-94,共5页Qing-feng Wu Sheng Cao Chun-lan Mo aian-li Zhang Xiao-lan Wang Zhi-jue Quan Chang-da Zheng Xiao-ming Wu Shuan Pan Guang-xu Wang Jie Ding Long-quan Xu aun-lin Liu Feng-yi Jiang 
Supported by the National Key R&D Program of China under Grant Nos 2016YFB0400600 and 2016YFB0400601;the State Key Program of the National Natural Science Foundation of China under Grant No 61334001;the National Natural Science Foundation of China under Grant Nos 21405076,11674147,61604066,51602141 and 11604137;the Key Technology Research and Development Program of Jiangxi Province under Grant Nos 20165ABC28007 and 20171BBE50052;Jiangxi Province Postdoctoral Science Foundation Funded Project under Grant No 2015KY32
Effect of hydrogen （142） treatment during the GaN barrier growth on the electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting diodes （LEDs） grown on Si substrates is experimentally ...
关键词：GaN Si 
InAlGaN superluminescent diodes fabricated on patterned substrates： an alternative semiconductor broadband emitter： publisher＇s note
《Photonics Research》2018年第6期652-652,共1页ANNA KAFAR SZYMON STANCZYK MARCIN SARZYNSKI SZYMON GRZANKA JAKUB GOSS IRINA MAKAROWA ANNA NOWAKOWSKA-SIWINSKA TADEK SUSKI PIOTR PERLIN 
This publisher＇s note reports the revision of the fimding section in Photon. Res. 5, A30 （2017）.
关键词：OPTOELECTRONICS Optical devices Semiconductor materials QUANTUM-WELL -wire and -dot devices 
Co and Phthalocyanine Overlayers on the Quantum-Well System Co(001)/Cu: Spin-Polarized Electron Reflection Experiments
《Journal of Modern Physics》2018年第5期976-984,共9页Etienne Urbain Guillaume Garreau Patrick Wetzel Samy Boukari Eric Beaurepaire Martin Bowen Wolfgang Weber 
The influence of a Co or phthalocyanine (Pc) molecular overlayer on the properties of quantum-well resonances (QWR) in Cu layers atop Co(001) is studied by means of spin-polarized electron reflection. For Co atoms and...
关键词：QUANTUM-WELL Resonances SPIN-POLARIZED Electron REFLECTION 
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