Perovskite Light-Emitting Diodes  

作　　者：Chenyang Zhao Dezhong Zhang Chuanjiang Qin 

机构地区：[1]State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130022

出　　处：《CCS Chemistry》2020年第4期859-869,共11页中国化学会会刊（英文）

基　　金：supported by the Young 1000 Talents Global Recruitment program of China and Chinese Academy of Sciences.

摘　　要：Perovskites show exciting potential for photoelectric applications,especially for light-emitting diodes(LEDs),owing to their intrinsically high photoluminescence efficiency and color purity.With efforts made over the last 5 years,the external quantum efficiency(EQE)of lead-halide perovskite-based LEDs has sharply increased beyond 20%,which is comparable to the performance of existing lighting technology.Strategies,including defect passivation,the formation of low-dimensional quantum-well structure perovskites,and a combination of appropriate electron and hole transport materials in electroluminescent devices.

关 键 词：lead-halide PEROVSKITE defect passivation carrier balance outcoupling RADIATIVE recombination QUANTUM-WELL structure stability PEROVSKITE LIGHT-EMITTING diodes 

分 类 号：TN312.8[电子电信—物理电子学]