InAlGaN superluminescent diodes fabricated on patterned substrates： an alternative semiconductor broadband emitter： publisher＇s note  

作　　者：ANNA KAFAR SZYMON STANCZYK MARCIN SARZYNSKI SZYMON GRZANKA JAKUB GOSS IRINA MAKAROWA ANNA NOWAKOWSKA-SIWINSKA TADEK SUSKI PIOTR PERLIN 

机构地区：[1]Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland [2]TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland

出　　处：《Photonics Research》2018年第6期652-652,共1页光子学研究（英文版）

摘　　要：This publisher＇s note reports the revision of the fimding section in Photon. Res. 5, A30 （2017）.

关 键 词：OPTOELECTRONICS Optical devices Semiconductor materials QUANTUM-WELL -wire and -dot devices 

分 类 号：TN1[电子电信—物理电子学]