Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n Heterojunctions  

作　　者：黄延红 金奎娟 赵昆 吕惠宾 何萌 陈正豪 周岳亮 杨国桢 马秀良 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 [2]Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016

出　　处：《Chinese Physics Letters》2006年第4期982-985,共4页中国物理快报（英文版）

基　　金：Project Supported by the National Natural Science Foundation of China （Grant No 10334070） and by the National Key Basic Research ＆ Development Programme of China （Grant No 2004CB619004）.

摘　　要：Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n hereto junctions of La0.9Sr0.1 MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit, photovoltaic pulses when the La0.9Sr0.1MnO3 film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hereto junction.Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n hereto junctions of La0.9Sr0.1 MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit, photovoltaic pulses when the La0.9Sr0.1MnO3 film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hereto junction.

关 键 词：MOLECULAR-BEAM EPITAXY OPTICAL-SPECTRA THIN-FILMS LA1-XSRXMNO3 MAGNETORESISTANCE SRTIO3 

分 类 号：O475[理学—半导体物理]