功率和温度对a-C:F:H膜表面形貌和结构的影响  

Effects of RF-power and temperature on surface morphology and microstructure of a-C∶F∶H thin films

作　　者：肖剑荣[1] 徐慧[1] 刘雄飞[1] 马松山[1] 

机构地区：[1]中南大学物理科学与技术学院,湖南长沙410083

出　　处：《真空》2006年第2期21-23,共3页Vacuum

摘　　要：分析薄膜的表面形貌对其生长机理和光学性质研究有着十分重要的作用。本文使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积(RF-PECVD)法在不同射频功率和沉积温度下制备了掺氟氢化无定形碳(a-C∶F∶H)薄膜,并在N2气氛中进行了不同温度的退火处理。用原子力显微镜(AFM)和扫描电子显微镜(SEM)观察了薄膜表面形貌,发现低功率下沉积的薄膜表面均匀性好、缺陷少;在低温下沉积的薄膜表面光滑,而高温下粗糙;真空低温退火可使薄膜表面形貌得到改善,但薄膜内空洞增加,退火温度过高,薄膜的结构发生变化,且在薄膜表面发生皲裂现象。用R am an光谱对薄膜内的结构变化进行了进一步的分析。Investigation on the surface morphology of thin solid films is of great importance in studying their growth mechanism and optic properties. Fluorinated amorphous hydrogenated carbon （a-C ： F ： H） thin films were deposited by RF plasma enhanced chemical vapor deposition （RF-PECVD） reactor with CF4 and CH4 as source gases at different RF-power and deposition temperatures and annealed in N2 atmosphere. In order to observe the surface morphology, AFM and SEM were used before and after annealing and iound that the surface microstructure of the film becomes less compact and more flatness after heat treatment. The thin films deposited at low RF-power and low temperature were homogeneous with few flaws but cracks were found at high annealing temperature. Raman spectroscopy was also used to study the microstructure of the films.

关 键 词：a-C:F:H薄膜 表面形貌 射频功率 沉积温度 真空退火 

分 类 号：TB43[一般工业技术] TN304[电子电信—物理电子学]