FABRICATION OF STRAINED-Si CHANNEL P-MOSFET's ON ULTRA-THIN SiGe VIRTUAL SUBSTRATES  

作　　者：Li Jingchun Yang Mohua Tan Jing Mei Dinglei Zhang Jing Xu Wanjing 

机构地区：[1]School of Microelectronics Science and Engineering, UESTC, Chengdu 610054, China [2]National Key Laboratory of Analog IC＇s, Chongqing 400060, China

出　　处：《Journal of Electronics(China)》2006年第2期266-268,共3页电子科学学刊（英文版）

摘　　要：In the ultra-thin relaxed SiGe virtual substrates, a strained-Si channel p-type Metal Oxide Semiconductor Field Effect Transistor (p-MOSFET) is presented. Built on strained-Si/240nm relaxed-Si0.8 Ge0.2/ 100nm Low Temperature Si (LT-Si)/10nm Si buffer was grown by Molecular Beam Epitaxy (MBE), in which LT-Si layer is used to release stress of the SiGe layer and made it relaxed. Measurement indicates that the strained-Si p-MOSFET's (L=4.2μm) transconductance and the hole mobility are enhanced 30% and 50% respectively, compared with that of conventional bulk-Si. The maximum hole mobility for strained-Si device is 140cm2/Vs. The device performance is comparable to devices achieved on several μm thick composition graded buffers and relaxed-SiGe layer virtual substrates.In the ultra-thin relaxed SiGe virtual substrates, a strained-Si channel p-type Metal Oxide Semiconductor Field Effect Transistor （p-MOSFET） is presented. Built on strained-Si/240nm relaxed-Si0.8 Ge0.2/ 100nm Low Temperature Si （LT-Si）/10nm S i buffer was grown by Molecular Beam Epitaxy （MBE）, in which LT-Si layer is used to release stress of the SiGe layer and made it relaxed. Measurement indicates that the strained-Si p-MOSFET＇s （L=4.2μm） transconductance and the hole mobility are enhanced 30% and 50% respectively, compared with that of conventional bulk-Si. The maximum hole mobility for strained-Si device is 140cm^2/Vs. The device performance is comparable to devices achieved on several μm thick composition graded buffers and relaxed-SiGe layer virtual substrates.

关 键 词：STRAINED-SI Virtual SiGe substrates p-type Metal-Oxide Semiconductor （MOS） Field-EffectTransistor （FET） 

分 类 号：TN386[电子电信—物理电子学]