云南高校图书馆联盟文献共享服务平台- STRAINED-SI

STRAINED-SI: 作品数：24被引量：22H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：谭静张静徐婉静杨谟华李竞春更多>>; 相关机构：中国电子科技集团公司第二十四研究所电子科技大学清华大学更多>>; 相关期刊：《Chinese Physics Letters》《Journal of Wuhan University of Technology(Materials Science)》《Chinese Physics B》《Journal of Semiconductors》更多>>; 相关基金：国家自然科学基金国家教育部博士点基金国家重点基础研究发展计划模拟集成电路国家重点实验室开放基金更多>>

Strain induced changes in performance of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex MOSFETs and circuits for digital applications: 《Journal of Central South University》2017年第6期1233-1244,共12页Kumar Subindu Kumari Amrita Das Mukul K; Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high perfor...; 关键词：complementary METAL-OXIDE-SEMICONDUCTOR (CMOS) HIGH-K dielectric material inverter METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT transistors (MOSFETs) SiGe series resistance strain

High-Mobility P-Type MOSFETs with Integrated Strained-Si_(0.73)Ge_(0.27) Channels and High-κ/Metal Gates: 《Chinese Physics Letters》2016年第11期127-130,共4页毛淑娟朱正勇王桂磊朱慧珑李俊峰赵超; Supported by the National Basic Research Program of China under Grant No 2011CBA00605;the National Natural Science Foundation of China under Grant No 61404165; Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors （pMOSFETs） using the replacement post-gate process. A silicon cap an...; 关键词：with is Channels and High Metal Gates High-Mobility P-Type MOSFETs with Integrated Strained-Si Ge of in

Intrinsic Carrier Concentration as a Function of Stress in(001),(101) and(111) BiaxiallyStrained-Si and Strained-Si_(1-x)Ge_x: 《Journal of Wuhan University of Technology(Materials Science)》2015年第5期888-893,共6页靳钊 QIAO Liping LIU Lidong HE Zhili GUO Chen LIU Ce; Funded by the National Natural Science Foundation of China(Nos.51278058,41404095,51277012,61201233);the Fundamental Research Funds for the Central Universities(Nos.2013G1241120,2013G1241107,2013G1241114,CHD2011ZD004);Research Fund of Shaanxi Provincial Research Center for Telecommunication ASIC Design(No.SXASIC2014-1);the Shaanxi Science and Technology Research and Development Program(No.2013KJXX-93); Intrinsic carrier concentration(ni) is one of the most important physical parameters for understanding the physics of strained Si and Si1-xGex materials as well as for evaluating the electrical properties of Si-based ...; 关键词：strain intrinsic carrier concentration KP theory density of state

The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels: 《Journal of Semiconductors》2015年第4期51-56,共6页亚森江.吾甫尔买买提明.艾尼买买提热夏提.买买提阿不都克里木.阿不都热合曼; supported by the National Natural Science Foundation of China(No.61366001);the National Basic Research Program of China(No.2011CB706601); The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of n...; 关键词：strain scattering ballistic channel Si-diode Monte Carlo simulation

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon–germanium substrates被引量：1: 《Journal of Semiconductors》2014年第10期30-36,共7页Pramod Kumar Tiwari Gopi Krishna Saramekala Sarvesh Dubey Anand Kumar Mukhopadhyay; The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- latio...; 关键词：strained-Si channel Si1-xGex substrate dual-metal gate subthreshold current subthreshold swing

Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology: 《Journal of Central South University》2014年第6期2292-2297,共6页王斌张鹤鸣胡辉勇张玉明周春宇李妤晨; Projects(51308040203,6139801)supported by the National Ministries and Commissions;Projects(72105499,72104089)supported the Fundamental Research Funds for the Central Universities,China;Project(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province,China; The effect of substrate doping on the threshold voltages of buried channel pMOSFET based on strained-SiGe technology was studied.By physically deriving the models of the threshold voltages,it is found that the layer w...; 关键词：buried pMOSFET strained SiGe plateau threshold voltage substrate doping Ge fraction

Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-k LaLuO3 Gate Dielectric: 《Chinese Physics Letters》2014年第1期119-122,共4页俞文杰张波刘畅薛忠营陈明赵清太; Supported by the Science and Technology Commission of Shanghai Municipality under Grant Nos 12ZR1453000, 12ZR1453100 and 12ZR1436300, the National Natural Science Foundation of China under Grant Nos 61306126, 61306127 and 61106015, and the CAS International Collaboration and Innovation Program on High Mobility Materials Engineering.; A strained-SiGe p-channel metal-oxide-semiconductor-field-effect transistors （p-MOSFETS） with higher-k LaLu03 gate dielectric was fabricated and electrically characterized. The novel higher-k （k-30） gate dielectri...

Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET被引量：2: 《Journal of Central South University》2013年第9期2366-2371,共6页王斌张鹤鸣胡辉勇张玉明周春宇李妤晨; Projects(51308040203,6139801)supported by National Ministries and Commissions,China;Projects(72105499,72104089)supported by the Fundamental Research Funds for the Central Universities,China;Project(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China; A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.Th...; 关键词：strained-Si/SiGe PMOSFET gate C-V characteristics PLATEAU doping concentration strained-Si layer thickness mass fraction of Ge

The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET被引量：1: 《Chinese Physics B》2013年第2期539-544,共6页王斌张鹤鸣胡辉勇张玉明周春宇王冠宇李妤晨; Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801);the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089);the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008); The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flat...; 关键词：strained-Si pMOSFET flatband voltage threshold voltage DOPING

Longitudinal,transverse,density-of-states,and conductivity masses of electrons in(001),(101) and(111) biaxiallystrained-Si and strained-Si_(1-x)Ge_x被引量：5: 《Science China(Physics,Mechanics & Astronomy)》2012年第11期2033-2037,共5页SONG JianJun YANG Chao ZHANG HeMing HU HuiYong ZHOU ChunYu WANG Bin; supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503);the National key Laboratory of Analog Integrated Circuitry Research Fund (Grant No.P140c090303110c0904); In this study,the electron effective masses,including longitudinal,transverse,density-of-states and conductivity effective masses,have been systematically investigated in(001),(101) and(111) biaxially strained Si and ...; 关键词：strained Si strained Si1-xGex effective mass electron

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