云南高校图书馆联盟文献共享服务平台- METAL-OXIDE-SEMICONDUCTOR

METAL-OXIDE-SEMICONDUCTOR: 作品数：60被引量：53H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：杨霏陶永洪汪玲刘奥陈弘达更多>>; 相关机构：国网智能电网研究院南京电子器件研究所中国科学院全球能源互联网研究院更多>>; 相关期刊：《Journal of Rare Earths》《系统仿真技术》《Chinese Physics B》《Chinese Physics Letters》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家电网公司科技项目中国博士后科学基金更多>>

SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-low Power Loss and Improved Short-Circuit Capability: 《Chinese Journal of Electronics》2024年第5期1127-1136,共10页Jinping ZHANG Qinglin WU Zixun CHEN Hua ZOU Bo ZHANG; supported by the China Postdoctoral Science Foundation(Grant No.2020M682607).; A silicon carbide(SiC)double trench metal-oxide-semiconductor field effect transistor(DTMOS)with split gate(SG)and integrated Schottky barrier diode(SBD)is proposed for the first time.The proposed device features two ...; 关键词：Silicon carbide Metal-oxide-semiconductor field effect transistor(MOSFET) Specific on resistance Reverse transfer capacitance High frequency figure of merit Forward conduction voltage drop Turn-on loss Turn-off loss Saturated drain current Short-circuit withstand time

Enhanced quality of Al_(2)O_(3)/SiC gate stack via microwave plasma annealing: 《Rare Metals》2024年第10期5362-5371,共10页Nan-Nan You Xin-Yu Liu Qian Zhang Zhen Wang Jia-Yi Wang Yang Xu Xiu-Yan Li Yu-Zheng Guo Sheng-Kai Wang; financially supported by Beijing Municipal Natural Science Foundation(No.4234091);the National Natural Science Foundation of China(Nos.62304245,61974159,62174176,62174122 and U2241244);the Scientific Instrument Developing Project of the Chinese Academy of Sciences(No.YJKYYQ20200039);the Out-standing Member Project of the Youth Innovation Promotion Association of CAS(No.Y2021046)。; The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealin...; 关键词：Silicon carbide Al_(2)O_(3) METAL-OXIDE-SEMICONDUCTOR Microwave plasma annealing Defect repairs X-ray photoelectron spectroscopy

Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect: 《Journal of Electronic Science and Technology》2023年第4期35-47,共13页Hang Chen You-Run Zhang; the Major Science and Technology Program of Anhui Province under Grant No.2020b05050007.; A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based ...; 关键词：HETEROJUNCTION On-state resistance Silicon carbide(4H-SiC)trench metal-oxide-semiconductor field effect transistors(MOSFETs) Switching loss

Improving interfacial and electrical properties of HfO_(2)/SiO_(2)/p-Si stacks with N_(2)-plasma-treated SiO_(2) interfacial layer被引量：1: 《Rare Metals》2023年第6期2081-2086,共6页Xiao-Qiang Chen Yu-Hua Xiong Jun Du Feng Wei Hong-Bin Zhao Qing-Zhu Zhang Wen-Qiang Zhang Xiao-Ping Liang; financially supported by the National Science and Technology Major Project of China (No. 2013ZX02303-001-002)。; The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was investigated.The microstructure a...; 关键词：METAL-OXIDE-SEMICONDUCTOR High-k Atomic layer deposited N_(2)-plasma treatment Interfacial characteristic Reliability

Dynamic electrostatic-discharge path investigation relied on different impact energies in metal-oxide-semiconductor circuits: 《Chinese Physics B》2023年第4期701-706,共6页谢田田王俊杜飞波郁扬蔡燕飞冯二媛侯飞刘志伟; Project supported by the National Natural Science Foundation of China(Grant No.61974017)。; Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,eas...; 关键词：electrostatic discharge trigger voltage latch up d V/dt effect

Large-area(64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor(NMOS) inverters被引量：1: 《Journal of Materials Science & Technology》2021年第22期26-35,共10页Shuangshuang Shao Kun Liang Xinxing Li Jinfeng Zhang Chuan Liu Zheng Cui Jianwen Zhao; This work was financially supported by the National Key R&D Program of“Strategic Advanced Electronic Materials”(No.2016YFB04011100);the Basic Research Program of Jiangsu Province(Nos.BK20161263,SBK2017041510);the Science and Technology Program of Guangdong Province(Nos.2016B090906002,2019B010924002);the Basic Research Program of Suzhou Institute of Nanotech and Nano-bionics(No.Y5AAY21001);the National Natural Science Foundation of China(Nos.61750110517,61805166);the Cooperation Project of Vacuum Interconnect Nano X Research Facility(NANO-X)of Suzhou Nanotechnology and Nano-Bionics Institute(H060)。; It is a big challenge to construct large-scale,high-resolution and high-performance inkjet-printed metal oxide thin film transistor(TFT)arrays with independent gates for the new printed displays.Here,a self-confined i...; 关键词：Inkjet printing Heterojunction channel 64×64 arrays High mobility NMOS inverter

Recent progresses of NMOS and CMOS logic functions based on two-dimensional semiconductors被引量：8: 《Nano Research》2021年第6期1768-1783,共16页Lingan Kong Yang Chen Yuan Liu; the National Natural Science Foundation of China(Nos.51991340,51991341,51802090,and 61874041);from the Hunan Science Fund for Excellent Young Scholars(No.812019037).; Metal-oxide-semiconductor field effect transistors(MOSFET)based on two-dimensional(2D)semiconductors have attracted extensive attention owing to their excellent transport properties,atomically thin geometry,and tunabl...; 关键词：field effect transistors two-dimensional semiconductors logic circuit complementary-metal-oxide-semiconductor(CMOS) polarity control

A review of rare-earth oxide films as high k dielectrics in MOS devices——Commemorating the 100th anniversary of the birth of Academician Guangxian Xu被引量：2: 《Journal of Rare Earths》2021年第2期121-128,共8页Shuan Li Youyu Lin Siyao Tang Lili Feng Xingguo Li; MOST of China(2017YFB0405902,2018YFB1502102);China Postdoctoral Science Foundation(BX20200004)。; Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outs...; 关键词：Rare earth Thin film OXIDES High k dielectric METAL-OXIDE-SEMICONDUCTOR

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor: 《Chinese Physics B》2020年第9期423-428,共6页He Guan Cheng-Yu Jiang Shao-Xi Wang; HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performa...; 关键词：HfAlO/InAlAs MOS-capacitor annealing temperature interface leakage current

Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon被引量：2: 《Photonics Research》2019年第3期351-358,共8页XIAODONG QIU ZIJING WANG XIAOTONG HOU XUEGONG YU DEREN YANG; National Natural Science Foundation of China(NSFC)(51532007,61574124,61721005); Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor(CMOS)compatible visible-blind short-wavelength infrared(SWIR) silicon photodetector is of interest for security,telecommunic...; 关键词：Visible-blind short-wavelength infrared photodetector hyperdoped silicon complementary metal-oxide-semiconductor(CMOS)

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