A review of rare-earth oxide films as high k dielectrics in MOS devices——Commemorating the 100th anniversary of the birth of Academician Guangxian Xu  

作　　者：Shuan Li Youyu Lin Siyao Tang Lili Feng Xingguo Li 

机构地区：[1]Beijing National Lnboratory of Molecular Sciences,State Key Laboratory of Rare Earth Materials Chemistry and Applications,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871,China [2]School of Chemical&Environmental Engineering,China University of Mining and Technology(Beijing),Beijing 100083,China

出　　处：《Journal of Rare Earths》2021年第2期121-128,共8页稀土学报（英文版）

基　　金：MOST of China(2017YFB0405902,2018YFB1502102);China Postdoctoral Science Foundation(BX20200004)。

摘　　要：Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).

关 键 词：Rare earth Thin film OXIDES High k dielectric METAL-OXIDE-SEMICONDUCTOR 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN386.1[电子电信—物理电子学]