Enhanced quality of Al_(2)O_(3)/SiC gate stack via microwave plasma annealing  

作　　者：Nan-Nan You Xin-Yu Liu Qian Zhang Zhen Wang Jia-Yi Wang Yang Xu Xiu-Yan Li Yu-Zheng Guo Sheng-Kai Wang 

机构地区：[1]High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China [2]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Electrical Engineering and Automation,Wuhan University,Wuhan430072,China [4]Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China

出　　处：《Rare Metals》2024年第10期5362-5371,共10页稀有金属（英文版）

基　　金：financially supported by Beijing Municipal Natural Science Foundation(No.4234091);the National Natural Science Foundation of China(Nos.62304245,61974159,62174176,62174122 and U2241244);the Scientific Instrument Developing Project of the Chinese Academy of Sciences(No.YJKYYQ20200039);the Out-standing Member Project of the Youth Innovation Promotion Association of CAS(No.Y2021046)。

摘　　要：The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealing(MPA)to obtain high-quality Al_(2)O_(3)/SiC gate stacks.By designing MPA atmosphere and optimizing the plasma power,the SiC MOS capacitor with a Al_(2)O_(3)dielectric film shows the enhanced performance.The interface state density is reduced by 1 order of magnitude to 6×10^(11)cm^(-2)·eV^(-1),the breakdown electric field is increased,and the voltage shift is effectively suppressed Besides,the mechanism of MPA process is discussed in terms of the thermal effect and reactant species.X-ray photoelectron spectroscopy(XPS)results unveil oxygen plasma plays the main role.Optimal plasma power during the MPA process results in defect repairs of the firstneighbor Al-O bonding and partial removal of Al-O-H bond from the interface region.This study demonstrates that MPA process is an effective option to realize highquality dielectric and interface on SiC.

关 键 词：Silicon carbide Al_(2)O_(3) METAL-OXIDE-SEMICONDUCTOR Microwave plasma annealing Defect repairs X-ray photoelectron spectroscopy 

分 类 号：TN386[电子电信—物理电子学] TB332[一般工业技术—材料科学与工程]