FIELD-EFFECT

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A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials
《Nano-Micro Letters》2025年第8期294-305,共12页Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian 
supported in part by STI 2030-Major Projects under Grant 2022ZD0209200;in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009);in part by National Natural Science Foundation of China under Grant No.62374099;in part by the Tsinghua-Toyota Joint Research Fund;in part by the Daikin Tsinghua Union Program;in part by Independent Research Program of School of Integrated Circuits,Tsinghua University;This work was also sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program.
Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of ...
关键词：Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling 
High‑Performance Gate‑All‑Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels
《Nano-Micro Letters》2025年第7期42-52,共11页Wei Liao Wentao Qian Junyang An Lei Liang Zhiyan Hu Junzhuan Wang Linwei Yu 
financial support received from the National Key Research Program of China under granted No.92164201;the National Natural Science Foundation of China for Distinguished Young Scholars No.62325403;the Fundamental Research Funds for the Central Universities,and the National Natural Science Foundation of China under No.61934004.
Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its appl...
关键词：In-plane solid-liquid-solid Ultrathin silicon nanowires Gate-all-around field-effect transistors(GAA-FETs) 
Flexible Graphene Field‑Effect Transistors and Their Application in Flexible Biomedical Sensing
《Nano-Micro Letters》2025年第2期252-313,共62页Mingyuan Sun Shuai Wang Yanbo Liang Chao Wang Yunhong Zhang Hong Liu Yu Zhang Lin Han 
supported by the National Key R&D Plan of China(Grant No.2023YFB3210400);the National Natural Science Foundation of China(No.62174101);the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603);the Fundamental Research Funds of Shandong University(2020QNQT001);Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,the Natural Science Foundation of Qingdao-Original exploration project(No.24-4-4-zrjj-139-jch).
Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabricati...
关键词：FLEXIBLE GRAPHENE Field-effect transistor Wearable IMPLANTABLE BIOSENSOR 
Logic-in-memory cell enabling binary and ternary Boolean logics
《Science China(Information Sciences)》2025年第2期366-375,共10页Jeongyun OH Juhee JEON Yunwoo SHIN Kyougah CHO Sangsig KIM 
partially supported by National Research Foundation of Korea Grant funded by the Korean Government(MSIT)(Grant Nos.RS-2023-00260876,2022M317A3046571);Samsung Electronics(Grant No.IO201223-08257-01);Brain Korea 21 Plus Project;a Korea University Grant。
In computing systems,processing and memory units have been integrated into logic-in-memory(LiM)to enhance the computational efficiency and performance.LiM has been attempted to perform not only binary but also ternary...
关键词：logic-in-memory reconfigurable channel modes ternary logic triple-gated feedback field-effect transistors 
Synthesis of wafer-scale monolayer MoS_(2) on sapphire: Unlocking the influence of key growth parameters
《Nano Research》2025年第2期930-939,共10页Rong Song Dingyi Shen Dongyan Liu Jingyi Liang Zimei Zhang Jingmei Tang Liang Chen Bo Li Jia Li Xidong Duan 
This work was granted by the National Key Research and Development Program of the of China(No.2022YFA1203801);the National Natural Science Foundation of China(Nos.51991340,51991343,52221001,52102168,and 52372145);Hunan Key Research and Development Program Project(No.2022GK2005);the Natural Science Foundation of Hunan Province(No.2023JJ20009);the Hunan Province“Huxiang Talents”Project(No.2023RC3092);the Natural Science Foundation of Chongqing,China(No.cstc2021jcyj-msxmX0321);the Doctoral Scientific Research Foundation of Hubei University of Automotive Technology(No.BK202486).
Large-scale synthesis of high-quality two dimensional(2D)semiconductors,such as molybdenum disulfide(MoS_(2)),is a prerequisite for their lab-to-fab transition.It is crucial to systematically explore and understand th...
关键词：wafer-scale MoS_(2)films chemical vapor deposition critical synthetic conditions MONOLAYER field-effect transistors 
Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
《Science China(Information Sciences)》2025年第1期376-382,共7页Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG 
National Natural Science Foundation of China(Grant No.62334003);Guangdong Basic and Applied Basic Research Foundation(Grant No.2020A1515110567).
In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor(MIS)cascode anode GaN lateral field-effect diode(CA-LFED)to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN ...
关键词：Schottky-MIS cascode anode lateral field-effect diode(LFED) ultralow reverse leakage current(ILEAK) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs 
High yield growth of centimeter-sized black phosphorus single crystal thin flakes through bidirectional vapor transport
《Science China Materials》2025年第1期217-225,共9页Siyuan Wang Cheng Chen Yaning Liang Xingang Hou Xiangyi Wang Zhuo Dong Junyong Wang Chao Jiang Kai Zhang 
National Key R&D Program of China (2021YFA1200804);National Natural Science Foundation of China (62274175 and 61927813);Jiangsu Province Key R&D Program (BE2023009-5 and BK20232044);Suzhou Basic Research Program (SJC2023004);The support from the Vacuum Interconnected Nanotech Workstation (Nano-X) of Suzhou Institute of Nanotech and Nanobionics (SINANO),Chinese Academy of Sciences is also acknowledged。
Black phosphorus(BP)has been regarded as a promising two-dimensional semiconductor due to its excellent properties including high carrier mobility and widely tunable direct bandgap.Despite extensive interest as well a...
关键词：black phosphorus single crystal chemical vapor transport two-dimensional materials field-effect transistors 
Recent progress on elemental tellurium and its devices
《Journal of Semiconductors》2025年第1期91-106,共16页Jiachi Liao Zhengxun Lai You Meng Johnny C.Ho 
supported by a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region,China(CityU RFS2021−1S04);the Innovation and Technology Fund(MHP/044/23)from the Innovation and Technology Commission of the Hong Kong Government Special Administrative Region,China.
The rapid advancement of information technology has heightened interest in complementary devices and circuits.Conventional p-type semiconductors often lack sufficient electrical performance,thus prompting the search f...
关键词：elemental tellurium PHOTODETECTOR field-effect transistor gas sensor energy harvesting device 
Strain-dependent charge trapping and its impact on the operational stability of polymer field-effect transistors
《npj Flexible Electronics》2024年第1期168-179,共12页Sangsik Park Seung Hyun Kim Hansol Lee Kilwon Cho 
supported by the National Research Foundation of Korea(NRF)grants(NRF-2020R1A2C3004477,RS-2022-00166297)funded by the Ministry of Science and ICT of the Korean government.
Despite recent dramatic improvements in the electronic characteristics of stretchable organic fieldeffect transistors(FETs),their low operational stability remains a bottleneck for their use in practical applications....
关键词：TRANSISTORS stability POLYMER 
Quantum transport in WSe_(2)/SnSe_(2)tunneling field effect transistors with high-k gate dielectrics
《Journal of Materials Science & Technology》2024年第34期149-156,共8页Hailing Guo Zhaofu Zhang Chen Shao Wei Yu Qingzhong Gui Peng Liu Hongxia Zhong Ruyue Cao John Robertson Yuzheng Guo 
supported by the National Natural Science Foun-dation of China(Grant Nos.62174122 and U2241244);the Fun-damental Research Funds for the Central Universities(Grant No.2042023kf0116);the Science and Technology Project of China Southern Power Grid Co.,Ltd.(Grant No.GXKJXM20220095);the Hubei Key Laboratory of Electronic Manufacturing and Pack-aging Integration of Wuhan University(Grant No.EMPI2023016)。
Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(...
关键词：Tunneling field-effect transistor High-k gate dielectrics Quantum transport calculation 
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