Strain-dependent charge trapping and its impact on the operational stability of polymer field-effect transistors  

作　　者：Sangsik Park Seung Hyun Kim Hansol Lee Kilwon Cho 

机构地区：[1]Department of Chemical Engineering,Pohang University of Science and Technology(POSTECH),Pohang,South Korea [2]Department of Chemical and Biological Engineering,Gachon University,Seongnam,South Korea

出　　处：《npj Flexible Electronics》2024年第1期168-179,共12页npj-柔性电子(英文)

基　　金：supported by the National Research Foundation of Korea(NRF)grants(NRF-2020R1A2C3004477,RS-2022-00166297)funded by the Ministry of Science and ICT of the Korean government.

摘　　要：Despite recent dramatic improvements in the electronic characteristics of stretchable organic fieldeffect transistors(FETs),their low operational stability remains a bottleneck for their use in practical applications.Here,the operational stability,especially the bias-stress stability,of semiconducting polymer-based FETs under various tensile strains is investigated.Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs.Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content,which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain.The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules.This work provides new insights for the development of bias-stable stretchable OFETs.

关 键 词：TRANSISTORS stability POLYMER 

分 类 号：TN3[电子电信—物理电子学]