激发频率对VHF-PECVD制备微晶硅材料性能的影响  

Effect of excitation frequency on microcrystalline silicon materials prepared by VHF-PECVD

作　　者：高艳涛[1] 张晓丹[1] 赵颖[1] 孙建[1] 朱峰[1] 魏长春[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《物理学报》2006年第3期1497-1501,共5页Acta Physica Sinica

基　　金：国家"973"重大基础研究发展规划项目(批准号:G2000028202;G2000028203);国家自然科学基金(批准号:60506003);中国-希腊政府间合作项目(批准号:05YEGHHZ01400);天津市科技攻关项目(批准号:043186511)资助的课题.~~

摘　　要：采用甚高频等离子增强化学气相沉积(VHF-PECVD)的方法制备了硅烷浓度分别为6%和7%,随激发频率变化(40—70MHz)的氢化微晶硅(μc-Si∶H)薄膜材料.研究了材料的电学特性、结构特性、沉积速率与激发频率之间的关系.结果发现材料的光敏性随频率的增加先降低后提高,晶化率和沉积速率的变化趋势与之相反;在晶化率最高点,材料在(220)的晶向衍射峰最高.并从光发射谱的角度研究了材料结构和沉积速率随频率变化的原因.Hydrogenated microcrystalline silicon （μc- Si：H） materials was prepared by plasma enhanced chemical vapor deposition （PECVD） at silane concentration 6% and 7% with changing excitation frequency （40--70MHz）. Relationship between excitation frequency and electrical, structural characteristics and deposition rate of the materials was studied. The results indicate that the crystalline volume fraction （ Xc ） decrease firstly and then increase with the increase of excitation frequency. But the photosensitivity and the deposition rate be have adversely with the change of excitation frequency. The reason of change of structure and deposition rate of thin films with excitation frequency was studied by optical emission spectroscopy.

关 键 词：甚高频等离子增强化学气相沉积 本征微晶硅 激发频率 

分 类 号：TN304[电子电信—物理电子学]